摘要

This letter presents a field-circuit coupling method for analysis of microwave circuit included with nonlinear physical-model-based semiconductor devices. The electromagnetic field is analyzed by the time-domain volume-surface integral equation (TD-VSIE) and the physical-model-based semiconductor is solved by spectral-element time-domain method. The discrete Newton-Raphson method is employed to solve the proposed field-circuit coupling equations. Compared to the traditional field-circuit coupling method in TD-VSIE, the proposed method can analyze not only the equivalent-model-based semiconductor circuit, but also the physical-model-based one. Finally, numerical results are given to demonstrate the accuracy and efficiency of the proposed method.