Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

作者：Garcia Hemme Eric^*; Garcia Hernansanz Rodrigo; Olea Javier; Pastor David; del Prado Alvaro; Martil Ignacio; Wahnon Perla; Sanchez Kefren; Palacios Pablo; Gonzalez Diaz German

来源：International Journal of Photoenergy, 2013, 473196.

DOI：10.1155/2013/473196

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV.

• 出版日期2013