Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

作者：Najmzadeh M^*; Boucart K; Riess W; Ionescu A M

来源：Solid-State Electronics, 2010, 54(9): 935-941.

DOI：10.1016/j.sse.2010.04.037

• Tunnel FET
• Band-to-band tunneling
• Local lateral uniaxial tensile strain
• Asymmetric strain profile
• Local strain engineering
• Local band-gap modulation
• Subthreshold swing
• Scaling
• Multi-gate
• Si nanowires

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and I(on)/I(off) characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the BTB source junction could act as an optimized performance Tunnel FET enabling the cancellation of the drain threshold voltage. To implement a real device, we demonstrate using GAA Si NW with asymmetric strain profile using two local stressor technologies to have >4-5 GPa peak of lateral uniaxial tensile stress in the Si NW.

• 出版日期2010-9
• 单位IBM