Direct band gap narrowing in highly doped Ge

作者：Camacho Aguilera Rodolfo^*; Han Zhaohong; Cai Yan; Kimerling Lionel C; Michel Jurgen

来源：Applied Physics Letters, 2013, 102(15): 152106.

DOI：10.1063/1.4802199

Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E-BGN = 0.013 eV and Delta(BGN) = 10(-21) eV/cm(-3). The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated.

• 出版日期2013-4-15