Negative-Voltage Electrostatic Discharge Characteristics of Blue Light-Emitting Diodes Using an Extended n-Electrode onto Plasma Treated p-GaN

作者：Kim Sang Mook; Oh Hwa Sub; Baek Jong Hyeob; Park Tae Young; Jung Gun Young^*

来源：Applied Physics Express, 2011, 4(7): 072102.

DOI：10.1143/APEX.4.072102

We developed light-emitting diodes (LEDs) having a shunt diode in order to improve their negative-voltage electrostatic discharge (ESD) characteristics. To make the discharge path, the n-electrode of the LED was extended over a p-GaN surface. The leakage current at reverse bias owing to the shunt diode can be significantly reduced via plasma treatment on the p-GaN surface prior to the extended n-electrode. In this design, the finger type extended n-electrode was implemented to minimize the light absorption by the n-electrode. The negative-voltage ESD threshold of the LED with the shunt diode significantly increased from 300-500 to 3000 V.

• 出版日期2011-7