Analysis of EEL spectrum of low-loss region using the C-s-corrected STEM-EELS method and multivariate analysis

作者：Yamazaki Takashi^*; Kotaka Yasutoshi; Kataoka Yuji

来源：Ultramicroscopy, 2011, 111(5): 303-308.

DOI：10.1016/j.ultramic.2011.01.005

• C-s-corrected HAADF STEM
• Multivariate analysis
• Interface plasmon state

We analyzed a Si/SiO2 interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy-electron energy loss spectroscopy which is characterized by using the electron energy loss spectrum of the low-loss region. We extracted the low-loss spectra of Si, SiO2 and an interface state. Even if the interface is formed from materials with different dielectric functions, the present method will prove suitable for obtaining a more quantitative understanding of the dielectric characteristic.

• 出版日期2011-4