科研之友
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摘要
A mechanism of degradation of semiconductor quantum-well lasers with a stripe contact more than 50 A mu m wide is proposed. This mechanism implies formation of several lasing channels at a carrier ambipolar diffusion length smaller than the contact width. The carrier diffusion length decreases with time due to the increase in the number of defects; as a result, the number of lasing channels increases and lasing spectrum is filled. The shape of the lasing spectrum can be used to predict the laser service life.
- 出版日期2013-10
