A study on the degradation of GaAs/Ge solar cells irradiated by < 200 keV protons

作者：Hu Jian Min; Wu Yi Yong^*; Zhang Zhongwei; Yang De Zhuang; He Shi Yu

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2008, 266(2): 267-270.

DOI：10.1016/j.nimb.2007.11.010

• GaAs/Ge solar cells
• proton irradiation
• electric properties
• spectral response

Damage effects in GaAs/Ge solar cells irradiated by < 200 keV protons were studied by measuring their electrical properties and spectral response together with SRIM simulations. Proton energies of 40, 70 and 170 keV were chosen. Experimental results show that the short circuit current, open circuit voltage and maximum power decrease with increasing proton fluence. The degradation of the open circuit voltage is highest for 70 keV irradiation and lowest for 40 keV irradiation. The degradation of short circuit current decreases with increasing proton energy. According to SRIM simulations and spectral response analysis, the above changes in electrical properties are mainly related to damage in different regions of the solar cells.

• 出版日期2008-1
• 单位哈尔滨工业大学; 哈尔滨师范大学; 上海空间电源研究所