Assessment of structure variation in silicon nanowire FETs and impact on SRAM

作者：Liao Yi Bo; Chiang Meng Hsueh^*; Kim Keunwoo; Hsu Wei Chou

来源：Microelectronics Journal, 2012, 43(5): 300-304.

DOI：10.1016/j.mejo.2011.12.002

• Nanowire FETs
• SRAM
• SNM

Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

• 出版日期2012-5