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摘要
Different modes of intermixing are observed in GaSb/GaAs layers via atom probe tomography. The intermixing length scale for quantum wells of varying thickness is on the order of a monolayer, but three times longer for the wetting layer of a quantum dot structure. The former arises from segregation of Sb and/or surface-induced intermixing via detachment from step edges. The latter is dominated by surface-induced intermixing due to disintegration of the GaSb dots upon capping.
- 出版日期2013-9-16
