Atomic structure of closely stacked InAs submonolayer depositions in GaAs

作者：Niermann T^*; Kiessling F; Lehmann M; Schulze J H; Germann T D; Poetschke K; Strittmatter A; Pohl U W

来源：Journal of Applied Physics, 2012, 112(8): 083505.

DOI：10.1063/1.4758301

The atomic structure of multiple buried InAs depositions with a nominal thickness below one monolayer, separated by thin GaAs spacer layers, was investigated using Cs-corrected high-resolution transmission electron microscopy. InAs composition maps were obtained with subnanometer resolution by local evaluation of the {200}-Fourier coefficients of the lattice images. A strong segregation behavior of the InAs depositions is found, which leads to significant intermixing with the spacer layers. The segregation coefficient R approximate to 0.7 is found to be independent of the spacer thickness, even for thin spacers with a thickness near the segregation length of about 3 monolayers.

• 出版日期2012-10-15