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摘要
The anomalous Hall effect in the ultrathin film regime is investigated in Fe(001)(1-3 nm) films epitaxial on MgO(001). The logarithmic localization correction to longitudinal resistivity and anomalous Hall resistivity are observed at low temperature. We identify that the coefficient of skew scattering has a reduction from metallic to localized regime, while the contribution of side jump has inconspicuous change except for a small drop below 10 K. Furthermore, we discover that the intrinsic anomalous Hall conductivity decreases with the reduction of thickness below 2 nm. Our results provide unambiguous experimental evidence to clarify the problem of localization correction to the anomalous Hall effect.
- 出版日期2016-6-15
- 单位应用表面物理国家重点实验室; 复旦大学
