Application of red light-emitting diodes using Mg3.5Ge1.25O6: Mn4+ phosphor

作者:Lee Seung Jae; Jung Jongjin; Park Ja Young; Jang Hye Mi; Kim Yong Rok; Park Joung Kyu
来源:Materials Letters, 2013, 111: 108-111.
DOI:10.1016/j.matlet.2013.08.098

摘要

Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the E-2 ->(4)A(2) transition of Mn4+ (lambda(ex)=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (lambda(em)=405 nm) and Mg3.5Ge1.25O6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

  • 出版日期2013-11-15

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