Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

作者：Yu CH; Lin HH; Cheng SL; Chen LJ^*

来源：Applied Physics Letters, 2003, 82(12): 1857-1859.

DOI：10.1063/1.1563060

Ultrafast directional crystallization that combined the electric current stressing with metal-induced crystallization has been achieved for BF2+-implanted amorphous Si (a-Si) at room temperature. Polycrystalline Si was observed to grow from anode towards cathode and the channels of a-Si strips with a length of 140 mum and a width of 10 mum can be fully crystallized with a stressing time less than 0.2 s. The directional growth of crystalline Si nanowires, 50 nm in width and as long as 3 mum in length, with an extraordinarily high aspect ratio of 60, indicates a strong electric-field-induced effect on the growth. The growth method provides a promising scheme to solve the problems caused by high-temperature and long-term annealing treatment for the applications of optoelectronic devices.

• 出版日期2003-3-24
• 单位清华大学