Droplet induced compositional inhomogeneities in GaAsBi

作者：Tait C Ryan; Yan Lifan; Millunchick Joanna M

来源：Applied Physics Letters, 2017, 111(4): 042105.

DOI：10.1063/1.4996537

Compositional inhomogeneities in III-V alloys heavily influence the device performance. This work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition, which we propose is due to a variation in the Ga flux across the surface. These inhomogeneities may be manipulated through the use of growth interrupts, which eliminate the buildup of Ga at the growth front. Published by AIP Publishing.

• 出版日期2017-7-24