A 4.2/7.2 GHz DUAL-BAND LC VCO IN 0.13 mm SIGE BICMOS

作者：Feng, Weiwei; Li, Xiuping^*; Zhu, Hua

来源：Microwave and Optical Technology Letters, 2017, 59(6): 1439-1441.

DOI：10.1002/mop.30554

• dual band
• VCO
• phase noise
• SiGe BiCMOS

This article presents a dual-band LC voltage switched oscillator (VCO), which can be regulated between 3.6-4.5 GHz and 6.5-7.8 GHz frequency bands. The VCO is realized employing a tunable LC tank with switched capacitors, which makes the dual-band operation available. The VCO has been implemented in 0.13 mu m SiGe BiCMOS technology, and draws around 5 mA and 5.2 mA in the core circuit with a 1.6 V supply at 4.22 GHz and 7.3 GHz, respectively. The measured phase noise performance of the VCO are 2103.36 dBc/Hz for 4.22 GHz and 2104.69 dBc/Hz for 7.3 GHz at 3 MHz offset. The core area of the chip is 0.13 mm(2) based on the use of a symmetric inductor.

• 出版日期2017-6
• 单位东南大学; 北京邮电大学