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摘要
The electrical and physical characteristics of (CeO2)(0.67)(Al2O3)(0.33) (CAO), for use in metal-oxide-semiconductor gate dielectric applications were investigated. The CAO thin films have been deposited at 650 degreesC in different oxygen pressures by pulsed laser deposition. The CAO thin film was found to exhibit excellent characteristics such as atomic-scale smooth surface, thin interfacial layer, high accumulation capacitance and low leakage current density. This demonstrates that CAO thin film is a promising gate dielectric replacing SiO2 in future for its good physical and electrical properties.
- 出版日期2003-7
