Dry Etching of Lead-Free (K,Na)NbO3 Piezoelectric Films by Ar/C4F8 Plasma

作者：Horikiri Fumimasa^*; Shibata Kenji; Suenaga Kazufumi; Watanabe Kazutoshi; Nomoto Akira; Mishima Tomoyoshi; Kurokawa Fumiya; Kanno Isaku

来源：Japanese Journal of Applied Physics, 2012, 51(7): 076202.

DOI：10.1143/JJAP.51.076202

We investigated the dry-etching characteristics of lead-free (K,Na)NbO3 (KNN) thin films by inductively coupled plasma-reactive ion etching (ICP-RIE) using Ar/C4F8 as the reactive gas mixture. The KNN etching depth showed a linear relationship as a function of the etching time with a few minutes%26apos; delay at the beginning. The etching rate increased with increasing antenna power and bias power. The antenna and bias dependences of the etching rate showed good linearity. The KNN/Pt selectivity increased with increasing antenna power and decreasing bias power. Thus, a high KNN/Pt selectivity was obtained under conditions of a high antenna power and a low bias power. The maximum KNN/Pt selectivity was 86. These etching results enable device fabrication using KNN thin films.

• 出版日期2012-7