Dopant-induced band filling and bandgap renormalization in CdO : In films

作者：Zhu Yuankun^*; Mendel**erg Rueben J; Zhu Jiaqi; Han Jiecai; Anders Andre

来源：Journal of Physics D: Applied Physics , 2013, 46(19): 195102.

DOI：10.1088/0022-3727/46/19/195102

The effect of carrier concentration on the Fermi level and bandgap renormalization in over 30 indium-doped cadmium oxide (CdO : In) films with carrier concentrations ranging from 1 to 15 x 10(20) cm(-3) was studied using the two-band k . p model with electron-electron and electron-ion interactions. It is shown that the Tauc relation, which is based on parabolic valence and conduction bands, overestimates the optical bandgap in the CdO films. Theoretical calculations of the optical bandgap give good agreement with experiments by taking into account the Burstein-Moss effect for a nonparabolic conduction band and bandgap renormalization effects. The band filling and bandgap renormalization in these CdO : In films are about 0.5-1.2 eV and 0.1-0.3 eV, respectively.

• 出版日期2013-5-15
• 单位哈尔滨工业大学