摘要

Effects of rare earth Dy and transition metal (TM = Cu, Co and Mn) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO3 thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method were investigated. All thin films formed as randomly oriented polycrystalline, with no detectable impurity or secondary phases. Among the thin films, the (Bi0.9Dy0.1)(Fe0.975Mn0.025)O-3 thin film exhibited well saturated hysteresis loops with remnant polarization (2P (r) ) of 51 mu C/cm(2) and low coercive electric field (2E (c) ) of 685 at 935 kV/cm and low leakage current density of 1.4 x 10(-5) A/cm(2) at 100 kV/cm. The enhanced properties observed in the co-doped thin films could be considered as being the results of the suppression of ionic defects and of the modified microstructure.

  • 出版日期2013-9

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