Multi-Bit Nano-Electromechanical Nonvolatile Memory Cells (Zigzag T Cells) for the Suppression of Bit-to-Bit Interference

作者：Choi Woo Young^*; Han Jae Hwan; Cha Tae Min

来源：Journal of Nanoscience and Nanotechnology, 2016, 16(5): 5164-5167.

DOI：10.1166/jnn.2016.12249

• Nano-Electromechanical (NEM) Nonvolatile Memory
• Bit-to-Bit Interference (BI)
• Finite-Element Modeling (FEM)
• T Cell

Multi-bit nano-electromechanical (NEM) nonvolatile memory cells such as T cells were proposed for higher memory density. However, they suffered from bit-to-bit interference (BI). In order to suppress BI without sacrificing cell size, this paper proposes zigzag T cell structures. The BI suppression of the proposed zigzag T cell is verified by finite-element modeling (FEM). Based on the FEM results, the design of zigzag T cells is optimized.

• 出版日期2016-5