摘要

Nanocrystalline diamond (NCD) film was deposited on a silicon substrate utilizing microwave plasma-enhanced chemical vapor deposition in a mixed flow of methane, hydrogen and argon. The deposited film had a cauliflower-like morphology, and was composed of NCD, carbon clusters and mixed sp(2)- and sp(3)-bonded carbon. Electron field emission (EFE) in vacuum and electrical discharges in Ar, N(2) and O(2) using the NCD film as the cathode were characterized. The turn-on field for EFE and the geometric enhancement factor for the NCD film were 8.5 V/mu m and 668, respectively. The breakdown voltages for Ar, N(2) and O(2) increased with pressures from 1.33 x 10(4) Pa to 1.01 x 10(5) Pa, following the right side of the normal Paschen curve.

  • 出版日期2010-5-31