科研之友
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摘要
The formation and growth of Ru-Si islands were observed on a ruthenium-deposited Si(111) surface during successive cycles of heating for 30s at 1423K and cooling. Lateral and vertical growth is analysed. The large lattice mismatch of small Ru2Si3 islands with the Si substrate modulates a Volmer-Weber type growth mode. When the islands are large, Ru2Si3 crystals are situated on a metastable buffer layer.
- 出版日期2013-7
