Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

作者：Lin, Y T; Wadekar, P V; Kao, H S; Chen, T H; Huang, H C; Ho, N J; Chen, Q Y; Tu, L W^*

来源：Applied Physics Letters, 2014, 104(6): 062414.

DOI：10.1063/1.4865785

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

• 出版日期2014-2-10
• 单位中山大学