Magnetization dissipation in the ferromagnetic semiconductor (Ga,Mn)As

作者:Hals Kjetil M D*; Brataas Arne
来源:Physical Review B, 2011, 84(10): 104404.
DOI:10.1103/PhysRevB.84.104404

摘要

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included nonperturbatively. In the clean limit, spin pumping from the localized d electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

  • 出版日期2011-9-2

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