Admittance and Permittivity in Doped Layered TlGaSe2 Single Crystals

作者：Dawood S A; Fedotov A K^*; Mammadov T G; Zukowski P; Koltunowicz T N; Saad A M; Drozdov N A

来源：Acta Physica Polonica, A, 2014, 125(6): 1267-1270.

DOI：10.12693/aphyspola.125.1267

In doped TlGaSe2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations N-imp < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with N-imp > 0.5 at.% resulted in full suppression of this phase transition presence.

• 出版日期2014-6