Alcohol-Based Digital Etch for III-V Vertical Nanowires With Sub-10 nm Diameter

作者：Lu Wenjie^*; Zhao Xin; Choi Dongsung; El Kazzi Salim; del Alamo Jesus A

来源：IEEE Electron Device Letters, 2017, 38(5): 548-551.

DOI：10.1109/LED.2017.2690598

• Digital etch
• InGaAs
• InGaSb
• nanowire
• FinFETs
• nanowire MOSFETs

This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and nanowire MOSFET fabrication. The new technique addresses the limitations of the conventional water-based approach in enabling structures with sub-10-nm 3-D features. Using the same oxidation step, the new technique shows an etch rate of 1 nm/cycle, identical to the conventional approach. Sub-10 nm fins and nanowires with a high mechanical yield have been achieved. InGaAs nanowires with a diameter of 5 nm and an aspect ratio greater than 40 have been demonstrated. The new technique has also been successfully applied to InGaSb-based heterostructures, the first demonstration of digital etch in this material system. Vertical InGaAs nanowire gate-all-around MOSFETs with a subthreshold swing of 70mV/decade atV(DS) = 50mV have been obtainedat a nanowire diameter of 40nm, demonstrating the good interfacial quality that the new technique provides.

• 出版日期2017-5