Attribution of white-light emitting centers with carbonized surface in nano-structured SiO2:C layers

作者：Vasin A V^*; Muto Sh; Ishikawa Yu; Salonen J; Nazarov A N; Lysenko V S

来源：Thin Solid Films, 2011, 519(12): 4008-4011.

DOI：10.1016/j.tsf.2011.01.199

• White photoluminescence
• Carbonization
• Silicon oxide
• STEM
• EELS

Carbon incorporated silicon oxide layers were fabricated by carbonization of porous silicon layer in acetylene atmosphere followed by oxidation in wet argon. The resulting porous SiO2:C material exhibited a strong white photoluminescence. Subsequent thermal treatment in oxygen at 600 degrees C significantly decreased the green-yellow part of photoluminescence band while blue shoulder remained unchanged. Annealing at the same temperature in pure argon did not change light-emission properties indicating that the green-yellow light-emission sites originate from the surface. This study focuses on the interface of silicon oxide matrix and carbon inclusions by high-resolution scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). It is confirmed by EELS and STEM that the green-yellow emission band is associated with the carbonized interface in the porous layer.

• 出版日期2011-4-1