Ultra-fast MHz range driving circuit for SiC MOSFET using frequency multiplier with eGaN FET

作者：Kim Taekyun^*; Jang Minsoo; Agelidis Vassilios G

来源：IET Power Electronics, 2016, 9(10): 2085-2094.

DOI：10.1049/iet-pel.2015.0491

• silicon compounds
• gallium compounds
• III-V semiconductors
• wide band gap semiconductors
• frequency multipliers
• DC-DC power convertors
• driver circuits
• power MOSFET
• ultrafast-MHz range driving circuit
• silicon carbide MOSFET
• frequency multiplier
• n-type e-gallium nitride FET technology
• silicon carbide metal oxide semiconductor field effect transistor
• switching frequency
• phase-shifted pulse width modulation
• nonisolated DC-DC boost converter
• two-parallel-connected gate driver

This study proposes a MHz gate driving solution for silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), which enables multiplication of the switching frequency by using the n-type eGaN FET technology and by connecting half-bridges in parallel. Phase-shifted pulse width modulation is used to multiple the output frequency by a factor of n, depending on the number of half-bridges connected in parallel. The proposed gate driver is analysed and experimentally validated for the operational performance of a 600 W non-isolated dc-dc boost converter operating at 2 MHz. In addition, the performance of a 5 MHz two-parallel-connected gate driver is presented.

• 出版日期2016-8-17