科研之友
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摘要
Bistable nonvolatile memory devices with resistive switching characteristics were fabricated based on polyurethane (PU) mixing with 2-(4-tert-butylphenyl)-5-(4-biphonylyl)-1,3,4-oxadiazole (PBD). The indium tin oxide/PU +PBD/aluminum device exhibited nonvolatile electrical bistable flash memory behavior with an ON/OFF state current ratio greater than 10(3). It has been demonstrated that the resistive switching characteristics in the memory device were strongly dependent on the treatment of the polymer blend by PBD. The additive of PBD in PU film reduced the current in the OFF-state significantly and improved the performance of device with the ON/OFF current ratio increased by 2 orders of magnitude, and ON and OFF states of the,device can be maintained over 5 h without deterioration.
