Design of broadband and high-efficiency class-E amplifier with pHEMT using a novel low-pass microstrip resonator cell

作者：Hayati Mohsen^*; Lotfi Ali

来源：Microwave and Optical Technology Letters, 2013, 55(5): 1118-1124.

DOI：10.1002/mop.27490

• switch mode
• class-E amplifier
• tapered cell
• microstrip resonant cell
• high efficiency
• power added efficiency
• zero voltage switching
• zero voltage derivative switching

In this article, a high-efficient class-E amplifier design with low voltage and broadband characteristics using a novel Front Coupled Tapered Compact Microstrip Resonant Cell is presented. The proposed micorstrip resonator is used as the harmonic control network in order to suppress higher order harmonics, which obtained the optimized impedance matching for the fundamental and harmonics. The class-E amplifier is realized from 0.7 to 1.8 GHz, and obtained the power added efficiency of 72.577.5%. The maximum value of Power added efficiency (PAE) is 79.7% with 11-dBm input power at 1.5 GHz. The designed class-E amplifier using the proposed harmonic control network gained 15.34% increment in PAE, and 25.6% reduction in the circuit size in comparison with the conventional class-E amplifier. The simulation and measurement results show the validity of the proposed design procedure of the broadband class-E amplifier using a novel microstrip resonator cell.

• 出版日期2013-5