Anti-Stokes luminescence in the light of second order perturbation theory

作者：Bhattacharya Rupak^*; Pal Bipul; Bansal Bhavtosh

来源：Applied Physics Letters, 2014, 105(19): 191102.

DOI：10.1063/1.4901075

Anti-Stokes photoluminescence is measured in high-quality GaAs quantum wells. The primary pathway for interband optical absorption and hence emission under subbandgap photoexcitation is the optical phonon-mediated second-order electric dipole transition. This conclusion is drawn from the remarkable agreement between predictions of second-order perturbation calculation and the measured intensity of anti-Stokes photoluminescence, both as function of the detuning wavelength and temperature. The results are of direct relevance to laser cooling of solids where phonon-assisted upconversion is a necessary condition.

• 出版日期2014-11-10