A novel exposure sensor based on reverse series memristor

作者：Wen, Changbao^*; Hong, Jitong; Yao, Shipeng; Niu, Taotao; Ju, Yongfeng

来源：Sensors and Actuators A: Physical , 2018, 278: 25-32.

DOI：10.1016/j.sna.2018.05.026

• Exposure sensor
• Memristor
• Measuring range
• Memory feature

In order to expand the measuring range of the exposure sensor and solve the current fluctuation caused by the memristor resistance, a novel exposure sensor based on reverse series memristor is proposed. The exposure sensor mainly consists of the photoresistor, the current limiting resistor and the reverse series memristor. The resistance of photoresistor varies with the illuminance, causing the loop current change. Based on the memory feature of the memristor, its resistance can be used to characterize the integral value of the illuminance for a period of time. Thus the measurement of the exposure can be realized by the exposure sensor based on reverse series memristor. In the exposure sensor, two series memristors constitute the reverse series memristor and they are connected in serial oppositely. And the sum of their normalized thicknesses is 1. Experimental results show that the exposure sensor based on reverse series memristor can measure the exposure and its measuring range is larger than other measurement methods. The measuring range is from 0 to 600 lx.s when the illuminance is 100 lx. With the increase of illuminance, the measuring range of the sensor will expand while the sensitivity will decrease. Because the resistance of the reverse series memristor almost remains unchanged during measuring exposure (the standard deviation of the change is only 0.43 Omega), the influence of the total resistance' increase on the loop current can be avoided. Thus it can avoid the impact on the measurement of the exposure and reduce the error introduced by the change of the memristors resistance. As the number of memristors increases, the measuring range will expand and the sensitivity will improve, but the symmetry of the reverse series memristor will deteriorate. Hence the number of memristors can't be excessively large. The variation tendency of the memristor resistance curve and the normalized thickness curve are consistent, and they rise along with the increase of the exposure. In addition, the measuring range of the exposure sensor will expand gradually while the sensitivity will decrease as the resistance of the current limiting resistor increases.

• 出版日期2018-8-1
• 单位长安大学