Miniaturized UWB Filters Integrated With Tunable Notch Filters Using a Silicon-Based Integrated Passive Device Technology

作者：Wu Zhengzheng^*; Shim Yonghyun; Rais Zadeh Mina

来源：IEEE Transactions on Microwave Theory and Techniques, 2012, 60(3): 518-527.

DOI：10.1109/TMTT.2011.2178428

• Integrative passive devices (IPDs) and modules
• interference suppression
• MEMS or microelectromechanical systems
• tunable filters
• ultra-wideband

This paper reports on the implementation of miniaturized ultra-wideband filters integrated with tunable notch filters using a silicon-based integrated passive device technology. An ultra-wideband bandpass filter is realized on a micromachined silicon substrate, showing an insertion loss of 1.1 dB, return loss of better than 15 dB, and attenuation of more than 30 dB at both lower and upper stop-bands, with a spurious-free response up to 40 GHz. The filter occupies only 2.9 mm x 2.4 mm of die area. To address the in-band interference issues associated with ultra-wideband communication, very compact tunable notch filters are monolithically integrated with the bandpass filters. A two-pole tunable notch filter integrated with an ultra-wideband filter provides more than 20 dB rejection in the 5-6 GHz range to reject U-NII interferences, with a total footprint of 4.8 mm x 2.9 mm. The power handling, linearity, and temperature stability of filters are characterized and presented in this paper.

• 出版日期2012-3