摘要

Superjunction has arguably been the most creative and important concept in power device field. -Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to lower the on-resistance for SJ VDMOS continues. This review is to summarize the development of SJ VDMOS structures and fabrication from the point of view of minimizing the on-resistance to below the Si limit. Finally, the future work what researchers can do on the SJ VDMOS also has been presented.

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