High order symmetry interference lithography based nanoimprint

作者：Letailleur Alban A^*; Nomenyo Komla; Mc Murtry Stefan; Barthel Etienne; Sondergard Elin; Lerondel Gilles

来源：Journal of Applied Physics, 2011, 109(1): 016104.

DOI：10.1063/1.3530729

We report on soft nanoimprint lithography using masters obtained by high order symmetry interference lithography. The use of high order symmetry leads to the formation of three-dimensional structures with features smaller than 40 nm. Masters were realized in silicon in a two-step process without transfer layer. Pure silicon masters allow mechanical stability and potential surface functionalization. We further demonstrate the ability of these masters as mold for nanoimprint lithography. High fidelity replication in hybrid sol-gel and pure silica with conservation of both minute features and long distance organization is observed over large areas.

• 出版日期2011-1-1