Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors

作者：Ishikawa Takayuki^*; Saitoh Masumi; Ota Kensuke; Tanaka Chika; Numata Toshinori

来源：Japanese Journal of Applied Physics, 2012, 51(4): 04DC05.

DOI：10.1143/JJAP.51.04DC05

Schottky barrier (SB) source/drain (S/D) nanowire field-effect transistors (FETs) were fabricated with lateral silicidation process, and their nanowire-width and dopant-species dependences were investigated systematically by means of electrical characterization and physical analyses. Carrier transport characteristics of these nanowire FETs showed a nanowire-width dependence and its dependence varied among dopant species. The degree of the lateral silicidation process also showed nanowire-width and dopant-species dependences. We found that the carrier transport mechanisms depending on S/D dopant species and nanowire width can be attributed to the difference of the lateral silicidation progress.

• 出版日期2012-4