An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor

作者：Dharmiza Dayang Nur Salmi^*; Oturu Mototada; Tanoi Satoru; Ito Hiroyuki; Ishihara Noboru; Masu Kazuya

来源：Japanese Journal of Applied Physics, 2012, 51(4): 04DE07.

DOI：10.1143/JJAP.51.04DE07

Multistandard RF chips have been highly demanded for multipurpose wireless applications. However, in RF circuits, a low-noise amplifier (LNA) plays an important role in determining the receiver%26apos;s performance. In this paper, we present a scalable wideband LNA based on complementary metal oxide semiconductor (CMOS) inverters, employing two bandwidth expansion techniques to achieve a large bandwidth without using inductors. Fabricated by the 40 nm CMOS process, the LNA attains 0.1-8.0 GHz of flat bandwidth with S-21 = 17.5 and S-11 %26lt;= -10 dB. The minimum NF measured is 5.1 dB and the power consumption is 14.3 mW at 1.3 V. The LNA core circuit is as small as 0.001 mm(2) since no large passive device is used. A study of LNA scalability has been conducted by comparing the performances of circuits with the same topology fabricated by the 65, 90, and 180 nm CMOS processes.

• 出版日期2012-4