Annealing effects on the migration of ion-implanted cadmium in glassy carbon

作者：Hlatshwayo T T^*; Sebitla L D; Njoroge E G; Mlambo M; Malherbe J B

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2017, 395: 34-38.

DOI：10.1016/j.nimb.2017.01.086

• Glassy carbon
• RBS
• Ion implantation
• Diffusion
• Raman

The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 x 10(16) ions/cm(2) and energy of 360 keV. The implantation was performed at room temperature (RT), 430 degrees C and 600 degrees C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 degrees C for 1 h and isothermally annealed at 350 degrees C up to 4 h. The as implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 degrees C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 degrees C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 degrees C. Isochronal annealing of the room temperature implanted samples at 350 degrees C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 degrees C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 degrees C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

• 出版日期2017-3-15