A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

作者：Dongfang Wang^*; Xiaojuan Chen; Xinyu Liu

来源：Chinese Journal of Semiconductors, 2010, 31(2).

DOI：10.1088/1674-4926/31/2/024001

• AlGaN/GaN HEMTs
• Current gain cutoff frequency
• Gate length
• Gate widths
• Ku band
• Linear gain
• Maximum frequency of oscillations
• Operating condition
• Output power
• Power densities
• Power-added efficiency
• Sapphire substrates

This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz. Under VDS 30 V, CW operating conditions at 14 GHz, the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%. Under pulse operating conditions, the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W. The power density reaches 3.4 W/mm.

• 出版日期2010