A 2D analytical model for SCEs in MOSFETs with high-k gate dielectric

作者：Xie Qian; Xu Jun^*; Ren Tianling; Taur Yuan

来源：Semiconductor Science and Technology, 2010, 25(3): 035012.

DOI：10.1088/0268-1242/25/3/035012

In this paper, a two-dimensional (2D) analytical potential model for MOSFETs with high-k gate dielectric is derived based on solving a boundary value problem with 2D Poisson's equation. A novel approach to estimate short-channel threshold voltage (V(T)) roll-off analytically is also presented and an explicit expression for the short-channel V(T) roll-off is obtained. Results show that the minimum surface potential along the channel, the inverse slope of subthreshold current, short-channel V(T) roll-off and drain-induced barrier lowering (DIBL) predicted by the analytical model are in close agreement with 2D numerical simulation (TCAD Sentaurus) without any fitting parameters even down to a sub-20 nm channel length. This model offers a physical insight into short-channel effects and how each of the parameters of a MOSFET quantitatively impacts on Delta V(T) and other key features of the device. It also serves for compact modeling of high-k gate dielectric MOSFETs.

• 出版日期2010-3-4
• 单位清华大学