H2O-Assisted O-2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

作者：Chung, Wan Fang^*; Chang, Ting Chang; Li, Hung Wei; Chen, Shih Ching; Chen, Yu Chun; Tseng, Tseung Yuen; Tai, Ya Hsiang

来源：Electrochemical and Solid-State Letters, 2011, 14(6): H235-H237.

DOI：10.1149/1.3568831

This paper investigates the environmental effects and related adsorbent species reactions on sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The discrepancy between device characteristics measured in atmospheric and vacuum conditions was clarified through experiments with thermal annealing and different gas partial pressures. The measurement of a-IGZO TFTs in simulated water vapor environment was also utilized. We verified that the adsorbed water originating from the surrounding atmosphere can cause an increase in off-current and also enhance more oxygen molecule adsorption on the exposed back-channel surface, leading to more serious degradation in on-current.

• 出版日期2011
• 单位中山大学