A study of dual-Vt configurations of an 8T SRAM cell in 45nm

作者：Liu Wenbin^*; Wang Jinhui; Wu Wuchen; Peng Xiaohong; Hou Ligang

来源：2011 IEEE 9th International Conference on ASIC, ASICON 2011, 2011-10-25 to 2011-10-28.

DOI：10.1109/ASICON.2011.6157180

• 8T
• Area overhead
• delay
• Delay Time
• Delay variation
• Dual-threshold voltage assignment
• Leakage power
• SNM
• SRAM Cell

Since the dual-threshold voltage assignment is an effective technique to reduce leakage power with negligible area overhead, we evaluate and compare the performance of an 8T SRAM cell in various dominant dual-Vt configurations in this paper, in order to provide the designer with a reasonable trade-off in SNM, leakage power, and delay for further different desired yields. According to simulation results, it is concluded that the configuration C8 has the highest SNM and high Vt Mnl can suppress the leakage current effectively. At last, the write and read delay time in different dual-Vt configurations are analyzed, and the reasons for delay variation are given.

• 出版日期2011
• 单位北京大学