Dependences of emission intensity of Si light-emitting diodes on dressed-photon-phonon-assisted annealing conditions and driving current

作者：Kim Jun Hyoung; Kawazoe Tadashi; Ohtsu Motoichi^*

来源：Applied Physics A-Materials Science & Processing, 2017, 123(9): 606.

DOI：10.1007/s00339-017-1215-8

We investigated how the injected current and the irradiation light power for dressed-photon-phonon (DPP)-assisted annealing affected the performance of the fabricated device. It was shown that there exists a threshold injection current for DPP-assisted annealing. In the case of the devices we fabricated, the threshold current was about 400 mA: When the injected current was below the threshold, the electroluminescence emission intensity did not change even after DPP-assisted annealing. On the other hand, when the injected current was above the threshold, the emission intensity increased by two orders of magnitude. The role of irradiation light was also examined and it was found that the emission spectral profile varied depending on the intensity of the irradiation light power in DPP-assisted annealing. Furthermore, we confirmed that the emission intensity had a quadratic dependence on the driving current when the driving current was higher than 400 mA. This quadratic dependence was considered to be due to electron-electron scattering.

• 出版日期2017-9