Diamond FinFET without Hydrogen Termination

作者：Huang Biqin; Bai Xiwei; Lam Stephen K; Tsang Kenneth K

来源：Scientific Reports, 2018, 8(1): 3063.

DOI：10.1038/s41598-018-20803-5

<jats:title>Abstract</jats:title><jats:p>In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.</jats:p>

• 出版日期2018-2-15