A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

作者：Huang, Xiaqi; Shao, Jinhai; Tsou, Chialin; Zhang, Sichao; Lu, Bingrui; Hao, Ling; Sun, Yan; Chen, Yifang^*

来源：Microelectronic Engineering, 2017, 172: 13-18.

DOI：10.1016/j.mee.2017.02.007

• Electron beam lithography
• PMMA/NEB bilayer
• Reactive ion etching
• Sub-20 nm gold slits

A novel electron beam lithography process using PMMA/NEB bilayer was successfully developed for the generation of ultrafine slits as well as broad trenches in a thick gold film. Slit-widths from micrometers down to sub 20 nm as the minimum feature size have been achieved. Electron beam lithography on the bilayer of PMMA/NEB with opposite tones between the top and the bottom layer was carefully studied by the contrast curve method. The processing parameters in both electron beam lithography and dry-etch were optimized for achieving ultrafine PMMA/NEB lines as the templates for forming nanoslits in Au films by the subsequent metallization and lift-off. The developed process is not only capable of replicating nano-trenches in Au film, but also applicable for manufacturing concave nanostructures in metals as a whole.

• 出版日期2017-3-25
• 单位中国科学院上海技术物理研究所; 专用集成电路与系统国家重点实验室; 复旦大学