Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles

作者：Bae Jung Hyeon^*; Kim Gun Hee; Jeong Woong Hee; Kim Hyun Jae

来源：Journal of the Society for Information Display, 2011, 19(5): 404-409.

DOI：10.1889/JSID19.5.404

• Non-volatile memory
• oxide semiconductor
• thin-film transistor
• solution process
• nanoparticles

Non-volatile memory effects of an all-solution-processed oxide thin-film transistor (TFT) with ZnO nanoparticles (NPs) as the charge-trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO(x) gate dielectric. ZnO NPs were used as the charge-trapping site at the gate-insulator-channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge-trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.

• 出版日期2011-5