Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer

作者：Oh Do Hyun; Lee Soojin; Cho Woon Jo; Kim Tae Whan^*

来源：Journal of Crystal Growth, 2008, 310(14): 3290-3293.

DOI：10.1016/j.jcrysgro.2007.12.068

• nanostructures
• nanomaterials
• semiconducting silicon

Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in. a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer.

• 出版日期2008-7-1