A flip-chip AlGaInP LED with GaN/sapphire transparent substrate fabricated by direct wafer bonding

作者：Liang Ting; Guo Xia^*; Guan Bao Lu; Guo Jing; Gu Xiao Ling; Lin Qiao Ming; Shen Guang Di

来源：Chinese Physics Letters, 2007, 24(4): 1110-1113.

A red-light AlGaInP light emitting diode (LED) is fabricated by using direct Wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance (EL) test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current-voltage (I-V) measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V < 1.5 V). In the large voltage region (V > 1.5 V), the I-V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.

• 出版日期2007-4
• 单位北京工业大学; 北京光电技术研究所