High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 x 3) silicide structure on Cu(001)

作者：Lalmi B^*; Chorro M; Belkhou R

来源：Journal of Applied Physics, 2013, 114(6): 063505.

DOI：10.1063/1.4817761

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (similar to 0.5 ML) and after annealing at 100 degrees C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate (5 x 3) superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the (5 x 3) structure.

• 出版日期2013-8-14